HAT2172N Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2172N
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 40
Gate to source breakdown voltage V_(BR)GSS ±20
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.5
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
27
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
—
6.1
6.9
45
2420
480
150
0.5
32
9
4.0
12
20
38
4.5
0.84
32
Max
—
—
±10
1
3.0
7.8
9.5
—
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 40 V, V_GS = 0
V_DS = 10 V, I_D = 10mA
I_D = 15 A, V_GS = 10 V ^Note4
I_D = 15 A, V_GS = 7 V ^Note4
I_D = 15 A, V_DS = 10 V ^Note4
V_DS = 10 V,V_GS = 0,
f = 1 MHz
V_DD = 10 V, V_GS = 10 V,
I_D = 30 A
V_GS = 10 V, I_D = 15 A,
V_DD ≅ 10 V, R_L = 0.67 Ω,
Rg = 4.7 Ω
I_F = 30 A, V_GS = 0 ^Note4
I_F = 30 A, V_GS = 0
di_F/ dt = 100 A/ µs
REJ03G1683-0100 Rev.1.00 May 28, 2008
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