HAT2141H_05 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2141H
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I_D = 2 A, 5 A, 10 A
40
V_GS = 7 V
20
10 V
2 A, 5 A, 10 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
200
20
I_D = 15 A
160
V_DD = 100 V
50 V
120 _VDS
25 V
16
V_GS
12
80
8
40
V_DD = 100 V
4
50 V
25 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
75°C
3
25°C
1
0.3
V_DS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
300
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
500
Switching Characteristics
200
100
td(off)
50
td(on)
20
tr
10
tf
5
2
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 µs, duty ≤ 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Rev.7.00 Sep 07, 2005 page 4 of 7