HAT2141H_05 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2141H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
16
4.5 V
Pulse Test
4.0 V
12
8
3.7 V
4
V_GS = 3.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Pulse Test
600
400
I_D = 10 A
200
5A
2A
0
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.7.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
500
100
10 _µs
10
1
Othpisearareti^Doa^Cni^OP_si^pWn^{er=at1io0nm(T1sc(m1=ss2h15o0°tC0)} ₎^µs
0.1 ^{limited by R}DS (on)
Ta = 25°C
0.01
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
25°C
–25°C
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
500 ^{Pulse Test}
200
100
50
V_GS = 7 V
20
10 V
10
5
2
1
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)