HAT2050T Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2050T
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
I_D = 2 A
1 A, 0.5 A
1.2
V_GS = 2.5 V
0.8
2A
1 A, 0.5 A
0.4
4V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1 0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
10
I_D = 1 A
40
V_DD = 5 V
8
10 V
20 V
30
V_GS
6
V_DS
20
4
10
V_DD = 20 V
2
10 V
5V
0
0
0 0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
5
2
Tc = –25°C
1
0.5
75°C
25°C
0.2
0.1
0.05
0.02
V_DS = 10 V
Pulse Test
0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
30
Coss
10
Crss
3
1
0
10 20
30 40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
50
20
td(off)
10
td(on)
tr
tf
5
2
1
0.01 0.02
V_GS = 4 V, V_DD = 10 V
PW = 5 µs, duty ≤ 1 %
0.05 0.1 0.2 0.5 1
Drain Current I_D (A)
Rev.3.00 Sep 07, 2005 page 4 of 7