HAT2050T Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2050T
Main Characteristics
Power vs. Temperature Derating
2.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
1.5
1.0
0.5
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
5
Pulse Test
8V
4
10 V
6V
3
5V
4V
2
3V
1
V_GS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
I_D = 2 A
1.2
0.8
1A
0.4
0.5 A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.3.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
10
10 µs
3
1
0.3
0.1
0.03
0.01
100 _µs
DC
Operation
Operation
in
PW
(PW
=
1 _ms
10 _ms
this area is
limited by R_{DS (on)}
≤ _{10 s) Note 5}
Ta = 25°C
0.003 1 shot Pulse
1 Drive Operation
0.001
0.2
1 3 10 30 100 200
Drain to Source Voltage V_DS (V)
Note 5:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
5
4
–25°C
3
25°C
2
Tc = 75°C
1
V_DS = 10 V
Pulse Test
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
20
Pulse Test
10
5
2
1
4V
0.5
V_GS = 10 V
0.2
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)