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HAT1108C_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching | |||
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HAT1108C
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
ID = â1.5 A
300
â4.5 V
â0.5, â0.75 A
200
ID = â0.5, â0.75, â1.5 A
100 VGS = â10 V
0
â25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
VDD = â5 V
â10 V
â20 V
â10
VDD = â5 V â4
â10 V
â20 V
â20
â8
VDS
â30
VGS
â12
ID = â1.5 A
â40
0
0.8 1.6 2.4 3.2
Gate Charge Qg (nC)
â16
4
Reverse Drain Current vs.
Source to Drain Voltage
â10
Pulse Test
â8
â6
â10 V
â4
â2
â4.5 V
VGS = 0, 5 V
0
â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
10
3
Tc = â25°C
1
25°C 75°C
0.3
0.1
â0.1
â0.3
VDS = â10 V
Pulse Test
â1
â3
â10
Drain Current ID (A)
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
30
Crss
10
0
â10
â20
â30
Drain to Source Voltage VDS (V)
Switching Characteristics
100
tr
td(off)
30
td(on)
10
3
VGS = â10 V, VDS = â10 V
1 RG = 4.7 Ω, Ta = 25°C
â0.1 â0.3
â1
â3
tf
â10
Drain Current ID (A)
R07DS1176EJ0600 Rev.6.00
Mar 19, 2014
Page 4 of 6
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