HAT1108C_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1108C
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
R_DS(on) = 155 mΩ typ. (at V_GS = –10 V)
• Low drive current.
• 4.5 V gate drive devices.
• High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband _{5 4}
6
3
2
1
Data Sheet
R07DS1176EJ0600
(Previous: REJ03G1234-0500)
Rev.6.00
Mar 19, 2014
2 34 5
DDD D
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
V_DSS
–30
Gate to Source voltage
V_GSS
–20 / +10
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
–1.5
–6
Body - Drain diode reverse drain current
Channel dissipation
I_DR
Pch^{Note 2}
–1.5
830
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
R07DS1176EJ0600 Rev.6.00
Mar 19, 2014
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