HAT1095C_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1095C
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
300
–1.8 V
200
–1 A ^{–0.5 A}
–2 A
–2.5 V
–0.5 A,1 A
100
0
–25
V_GS = –4.5 V _{–2 A ID = –0.5 A,1 A}
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–20 V
–2
V_DD = –20 V
–20
–10 V
–4
–5 V
–30
–6
–40
–8
0
2
4
6
8
10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
–8
–6
5V
–4
–2
V_GS = 10 V
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
3
Tc = –25°C
25°C
1
75°C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3
V_DS = 10 V
Pulse Test
1 3 10
Drain Current I_D (A)
10000
300
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
100
Coss
Crss
30
10
0
–2 –4 –6 –8 –10 –12
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = –10 V, V_DD = –10 V
300 Rg = 4.7 Ω
tr
100
td(off)
30
td(on)
10
tf
3
1
0.3
0.1
0.01 0.02 0.1 0.3 1 3 10
Drain Current I_D (A)
R07DS1174EJ0600 Rev.6.00
Mar 19, 2014
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