HAT1095C_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1095C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10
–10 V
–8
–4.5 V
–3.5 V
–6
Pulse Test
–2.5 V
–4
–2.0 V
–1.8 V
–2
–1.6 V
V_GS = –1.4 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–500
Pulse Test
–400
–300
–200
–2 A
–100
–1 A
0
I_D = –0.5 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
R07DS1174EJ0600 Rev.6.00
Mar 19, 2014
Maximum Safe Operation Area
–100
–30
10 μs
–10
When using the FR4 board.
Ta = 25°C,1shot pulse
100 μs
–3
–1
–0.3
–0.1
–0.03
Operation in this area
is limited by R_DS(on)
–0.01 –0.03 –0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–10
V_DS = 10 V
Pulse Test
–8
Tc = 75°C
–6
25°C
–25°C
–4
–2
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10000
Pulse Test
1000
100
1.8 V
2.5 V
V_GS = –4.5 V
10
–0.1
–1
–10
Drain Current I_D (A)
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