HAT1093C_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOSFET

HAT1093C
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
160
120
–1.5, –1 A
–1.8 V
–3.0 A
80
–2.5 V
40
0
V_GS = –4.5 V
I_D = –3, –1.5, –1 A
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–12 V
–10
–2
V_DD = –12 V
–10 V
–20
–5 V _–4
–30
–6
I_D = –3 A
–40
0
4
8
–8
12 16 20
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
–5.5 V
12
V_GS = 0 V
8
4
0
0.4 0.8 ^{1.2 1.6 2.0}
Source to Drain Voltage V_SD (V)
Preliminary
Forward Transfer Admittance vs.
Drain Current
100
25°C
Tc = –25°C
10
75°C
1
0.1
–0.1
V_DS = –10 V
Pulse Test
–1
–10
–100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
V_GS = 0
f = 1 MHz
Ciss
300
Coss
100
Crss
30
10
3
1
0 –2 –4 –6 –8 –10 –12
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = –10 V, V_DD = –10 V
Rg = 4.7 Ω
100
td(off)
tr
tf
10
td(on)
1
0.1
1
10
100
Drain Current I_D (A)
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Page 4 of 6