HAT1093C_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOSFET

HAT1093C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
Pulse Test
16
–10 V
–5 V
12
–2.4 V
8
4
–2.2 V
–2.0 V
–1.8 V
V_GS = –1.6 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–200
Pulse Test
–160
–120
I_D = –3 A
–80
–1.5 A
–40
–1 A
0
0
–2
–4
–6 –8 –10
Gate to Source Voltage V_GS (V)
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Preliminary
Maximum Safe Operation Area
–100
Ta = 25°C,1shot pulse
–30 ^{10 μs 100μs When using the FR4 board.}
–10
–3
–1
–0.3
1
PW=10
ms
ms
–0.1
–0.03
Operation in this area
is limited by R_DS(on)
–0.01 –0.03 –0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = –10 V
Pulse Test
16
25°C
12 _{Tc = 75°C}
–25°C
8
4
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10000
Pulse Test
1000
–1.8 V
100
10
–1
–2.5 V
V_GS= –4.5 V
–10
Drain Current I_D (A)
–100
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