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HAT1093C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOSFET Power Switching | |||
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HAT1093C
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
160
120
â1.5, â1 A
â1.8 V
â3.0 A
80
â2.5 V
40
0
VGS = â4.5 V
ID = â3, â1.5, â1 A
â25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
VDD = â5 V
â10 V
â12 V
â10
â2
VDD = â12 V
â10 V
â20
â5 V â4
â30
â6
ID = â3 A
â40
0
4
8
â8
12 16 20
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
â5.5 V
12
VGS = 0 V
8
4
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Forward Transfer Admittance vs.
Drain Current
100
25°C
Tc = â25°C
10
75°C
1
0.1
â0.1
VDS = â10 V
Pulse Test
â1
â10
â100
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
VGS = 0
f = 1 MHz
Ciss
300
Coss
100
Crss
30
10
3
1
0 â2 â4 â6 â8 â10 â12
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = â10 V, VDD = â10 V
Rg = 4.7 Ω
100
td(off)
tr
tf
10
td(on)
1
0.1
1
10
100
Drain Current ID (A)
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Page 4 of 6
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