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HAT1093C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOSFET Power Switching | |||
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HAT1093C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
Pulse Test
16
â10 V
â5 V
12
â2.4 V
8
4
â2.2 V
â2.0 V
â1.8 V
VGS = â1.6 V
0
â2 â4 â6 â8 â10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
â200
Pulse Test
â160
â120
ID = â3 A
â80
â1.5 A
â40
â1 A
0
0
â2
â4
â6 â8 â10
Gate to Source Voltage VGS (V)
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Preliminary
Maximum Safe Operation Area
â100
Ta = 25°C,1shot pulse
â30 10 μs 100μs When using the FR4 board.
â10
â3
â1
â0.3
1
PW=10
ms
ms
â0.1
â0.03
Operation in this area
is limited by RDS(on)
â0.01 â0.03 â0.1 â0.3 â1 â3 â10 â30 â100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = â10 V
Pulse Test
16
25°C
12 Tc = 75°C
â25°C
8
4
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10000
Pulse Test
1000
â1.8 V
100
10
â1
â2.5 V
VGS= â4.5 V
â10
Drain Current ID (A)
â100
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