HAT1090C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1090C
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
160
120
–2.5 V
80
I_D = –2.5 A
–1, –1.3 A
40 _{VGS = –4.5 V ID = –1, –1.3, –2.5 A}
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–20 V
–10
–2
–20 ^VDD
V_DD = –5 V
–10 V
–20 V
–4
–30
I_D = –2.5 A
–40
0
4
8
Gate Charge
V_GS
12 16
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
–10
–6
–8
20
–8
–5 V
–6
V_GS = 0, 5 V
–4
–2
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
30
10
Tc = –25°C
3
25°C
1
75°C
0.3
0.1
–0.01 –0.03
–0.1
–0.3
V_DS = –10 V
Pulse Test
–1 –3 –10
Drain Current I_D (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
300
100
Ciss
Coss
30
Crss
10
0
–10
–20
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = –4.5 V, V_DD = –10 V
R_G = 4.7 Ω, Ta = 25°C
td(off)
100
tr
tf
10
td(on)
1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
R07DS1171EJ0500 Rev.5.00
Mar 19, 2014
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