HAT1090C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1090C
Main Characteristics
Power vs. Temperature Derating
1.6
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Tc (°C)
Typical Output Characteristics
–10
–10 V
Pulse Test
–4.5 V
–8
–2.5 V
–2.2 V
–2 V
–6
–1.8 V
–4
–1.6 V
–2
V_GS = –1.4 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–160
Pulse Test
–120
–80
–1.3 A
–40
–1 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
–100
When using the FR4 board.
–30 _{10 μs 100 μs}
1 shot pulse, Ta = 25°C
–10
–3
–1
–0.3
PW
1 _ms
= _{10 ms}
–0.1
–0.03
Operation in this
area is limited by
R_DS(on)
–0.01 –0.03 –0.1 –0.3 –1 –3 –10 –30 –100
Drain Source Voltage V_DS (V)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
25°C
–8
–25°C
Tc = 75°C
–6
–4
–2
0
–1 –2
–3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
100
V_GS = –2.5 V
–4.5 V
10
–0.1
Pulse Test
–1
–10
Drain Current I_D (A)
–100
R07DS1171EJ0500 Rev.5.00
Mar 19, 2014
Page 3 of 6