HAT1089C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1089C
Static Drain to Source on State Resistance
vs. Temperature
250
200
150 _{VGS = –2.5 V}
100
I_D = –2 A
I_D = –1 A
I_D = –0.5 A
50 V_GS = –4.5 V ^{ID = –1 A, –2 A, –0.5 A}
0
–25 0 25 50 75
Case Temperature
Pulse Test
100 125 150
Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–20 V
V_DD
–2
V_DD = –5 V
–10 V
–20 V _–4
I_D = –2 A
–4
0 1.6 3.2 4.8 6.4
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8 ^{VGS = –5 V VGS = 0, 5 V}
–8
8.0
–6
–4
–2
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
Tc = –25°C
1.0 ^25°C
75°C
0.1
0.01
–0.01
V_DS = –10 V
Pulse Test
–0.1
–1.0
–10
Drain Current I_D (A)
Typical Capacitance vs.
1000
Drain to Source Voltage
Ciss
Coss
100
Crss
V_GS = 0
f = 1 MHz
10
0
–5
–10
–15 –20
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
V_GS = –4.5 V, V_DD = 10 V
R_G = 4.7 Ω, Ta = 25°C
100
td(off)
tr
tf
td(on)
10
1
–0.1
–1.0
–10
Drain Current I_D (A)
R07DS1170EJ0400 Rev.4.00
Mar 19, 2014
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