HAT1089C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1089C
Main Characteristics
Power vs. Temperature Derating
1.6
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10
–10.0 V
Pulse Test
–4.5 V
–8
–3.0 V
–2.5 V
–6
–2.2 V
–2.0 V
–4
–1.8 V
–2
–1.6 V
V_GS = –1.4 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–400
Pulse Test
–300
–200
I_D = –2 A
–100
I_D = –1 A
I_D = –0.5 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
–100
Maximum Safe Operation Area
10 μs
100 μs
When using the FR4 board.
1 shot pulse, Ta = 25°C
–10
–1
–0.1
PW ^{1 ms}
DC
= ₁₀
operation
ms
–0.01
Operation in this
area is limited by
R_DS(on)
–0.001
–0.001 –0.01 –0.1 –1 –10 –100
Drain Source Voltage V_DS (V)
Typical Transfer Characteristics
–10
V_DS = –10 V _25°C
Pulse Test
–8
–6
–25°C
–4
Tc = 75°C
–2
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
V_GS = –2.5 V
100
V_GS = –4.5 V
Pulse Test
10
–0.1
–1
–10
Drain Current I_D (A)
R07DS1170EJ0400 Rev.4.00
Mar 19, 2014
Page 3 of 6