HAT1043M Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

HAT1043M
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
–1 A, –2 A
150
I_D = –5 A
100 –2.5 V
–5 A
50
0
–50
V_GS = –4.5 V
–1 A, –2 A
0
50 100 150 200
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
–0.1 –0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–20 V
–2
–20
V_GS
V_DS
–30
V_DD = –5 V
–10 V
–20 V
–40
I_D = –4.4 A
–50
0
4
8
12 16
Gate Charge Qg (nc)
–4
–6
–8
–10
20
Forward Transfer Admittance vs.
Drain Current
50
20
10 Tc = –25°C
5
25°C
2
1
75°C
0.5
0.2
V_DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –50
Drain Current I_D (A)
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0
–4
–8 –12 –16 –20
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
500
tr
200
tf
100
50
20
td(on)
td(off)
10 _{VGS = –4.5 V, VDD = –10 V}
PW = 5 µs, duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2 –5
–10 –20
Drain Current I_D (A)
Rev.6.00 Sep 07, 2005 page 4 of 6