HAT1043M Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

HAT1043M
Main Characteristics
Power vs. Temperature Derating
2.0
1.5
1.0
0.5
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Test Condition:
When using the alumina ceramic board
(50 × 50 × 0.7 mm), (PW ≤ 5 s)
Typical Output Characteristics
–10
–10 V
–4 V
–8
–3 V
–2.5 V
–6
Pulse Test
–2 V
–4
–2
V_GS = –1.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
–0.2
I_D = –5 A
–0.1
–2 A
–1 A
0
0
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Rev.6.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–100
–30
10 µs
–10
–3
–1
–0.3
–0.1
–0.03
OperaDtCioOnpienraPtWion=(1P0Wms
1
(1
ms
shot)
this area is
limited by R_{DS (on)}
Ta = 25°C
≤ _N5oste)5
1 shot pulse
–0.01
–0.1 –0.3 –1 –3 –10
100 µs
–30 –100
Drain to Source Voltage V_DS (V)
Note 5:
When using the alumina ceramic board
(50 × 50 × 0.7 mm)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
–6
–4
–2
Tc = –25°C
75°C
25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
100
V_GS = –2.5 V
50
–4.5 V
20
10
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I_D (A)