HAF2011 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2011(L), HAF2011(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
80
8V
6V
5V
Pulse Test
60
4V
40
V_GS = 3.5 V
20
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
I_D = 20 A
0.3
0.2
10 A
0.1
5A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
REJ03G1138-0500 Rev.5.00 Aug 21, 2007
Page 4 of 8
Maximum Safe Operation Area
500
Thermal shut down
200 ^{Operation area}
100
50
20
10
5
2
1
OtlihmpisietearadretiboaynisDRinC_D^O_S ^p_(o^e_n^raP₎ ^{tWion=(1T0c1m=m1s20s50}_°C^µs)
0.5 _{Ta = 25°C}
0.3
0.3 0.5 1 2
5 10 20
50 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
40
Tc = –25°C
25°C
30
20
75°C
10
V_DS = 10 V
Pulse Test
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
50
V_GS = 4 V
20
10
10 V
5
2
Pulse Test
1
1 2 5 10 20
50 100 200
Drain Current I_D (A)