HAF2011 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2011(L), HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G1138-0500
Rev.5.00
Aug 21, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
1
23
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
D
1. Gate
2. Drain
3. Source
4. Drain
G
Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
REJ03G1138-0500 Rev.5.00 Aug 21, 2007
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