HAF2002 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2002
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
8V
40
6V
Pulse Test
5V
30
4V
20
3.5 V
10
V_GS = 3 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
I_D = 20 A
0.4
10 A
5A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.3.00 Sep 07, 2005 page 4 of 8
Maximum Safe Operation Area
500
Thermal shut down
200 ^{Operation area}
100
20 µs
50
20
10
5
2
1
100 _µs
OtlihmpisietearadretibaoyniDsRiCn_D^O_S^p₍^e_o^r_n^a₎^{tionPW(Tc==1102m5m}_°^sCs ₎
0.5 _{Ta = 25°C}
0.3
0.3 0.5 1 2 5 10 20 50 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
Tc = –25°C
25°C
75°C
20
10
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
1
2 5 10 20 50 100 200
Drain Current I_D (A)