HAF2002 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2002
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
ID1
ID2
V (BR) DSS
V (BR) GSS
V (BR) GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS (op) 1
IGS (op) 2
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Coss
10
—
60
16
–2.8
—
—
—
—
—
—
—
1.0
—
—
6
—
—
—
—
10
—
—
—
—
—
—
— 100
—
50
—
1
— –100
0.8
—
0.35 —
— 250
— 2.25
50
65
30
43
12
—
630 —
A VGS = 3.5 V, VDS = 2 V
mA VGS = 1.2 V, VDS = 2 V
V ID = 10 mA, VGS = 0
V IG = 100 µA, VDS = 0
V IG = –100 µA, VDS = 0
µA VGS = 8 V, VDS = 0
µA VGS = 3.5 V, VDS = 0
µA VGS = 1.2 V, VDS = 0
µA VGS = –2.4 V, VDS = 0
mA VGS = 8 V, VDS = 0
mA VGS = 3.5 V, VDS = 0
µA VDS = 50 V, VGS = 0
V ID = 1 mA, VDS = 10 V
mΩ ID = 10 A, VGS = 4 V ^{Note 3}
mΩ ID = 10 A, VGS = 10 V ^{Note 3}
S
ID = 10 A, VDS = 10 V ^{Note 3}
pF VDS = 10 V, VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Over load shut down operation time ^Note4
Notes: 3. Pulse test
td (on)
tr
td (off)
tf
VDF
trr
tos1
tos2
—
7.5
—
—
29
—
—
34
—
—
26
—
—
1.0
—
— 110 —
—
1.8
—
—
0.7
—
µs ID = 5 A
µs VGS = 5 V
µs RL = 6 Ω
µs
V IF = 20 A, VGS = 0
ns IF = 20 A, VGS = 0
diF/dt = 50 A/µs
ms VGS = 5 V, VDD = 12 V
ms VGS = 5 V, VDD = 24 V
4. Include the time shift based on increasing of channel temperature when operate under over load condition.
Rev.3.00 Sep 07, 2005 page 3 of 8