H5N2005DL_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 200V - 6A - MOS FET High Speed Power Switching

H5N2005DL, H5N2005DS
Typical Capacitance vs.
Drain to Source Voltage (Typical)
1000
Ciss
100
Coss
10
Crss
V_GS = 0
f = 1 MHz
Ta = 25°C
1
0
20 40
60 80 100
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
10
V_GS = 0 V
Ta = 25 °C
8 ^{Pulse Test}
6
4
2
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics (Typical)
400
I_D = 6 A
V_GS
16
Ta = 25 °C
300
200
V_DS
12
V_DD = 160 V
100 V
50 V
8
100
0
0
4
V_DD = 160 V
100 V
50 V
0
4
8
12 16 20
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
I_D = 10 mA
4
3
1 mA
0.1 mA
2
1
V_DS = 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
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