H5N2005DL_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 200V - 6A - MOS FET High Speed Power Switching

H5N2005DL, H5N2005DS
200V - 6A - MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0796EJ0400
(Previous: REJ03G1104-0300)
Rev.4.00
Jun 07, 2012
Features
 Low on-resistance
R_DS(on) = 0.52  typ. (at I_D = 3 A, V_GS = 10 V, Ta = 25C)
 Low drive power
 High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^{Note 1}
I_DR
I_DR(pulse) ^{Note 1}
I_APNote3
Pch ^{Note 2}
ch-c
Tch
Tstg
Value
200
30
6
24
6
24
6
25
5
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
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