GN4014ZB4LD_09 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon IGBT Ignition Coil Driver

GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Collector to Emitter Saturation Voltage
vs. Collector Current
10
5
2 -40°C
25°C
1
0.5
Tc = 125°C
0.2 V_GE = 10 V
Pulse Test
0.1
0.1 0.3 1
3 10 30 100
Collector Current I_C (A)
Dynamic Input Characteristics
50
20
I_C = 10 A
Ta = 25°C
40
V_GE
16
V_CE = 16 V
30
12
20
8
10
4
V_CE
0
0
0
20
40
60
80 100
Gate Charge Qg (nc)
Secondary Breakdown Current
vs. Inductance Ratio
100
50
20
25°C
10
5
Tc = 140°C
2 _{VCC = 16 V}
V_GE = 10 V, Rg = 200 Ω
1
0.1 0.2 0.5 1 2
5 10
Inductance Ratio L (mH)
10000
Typical Capacitance vs.
Collector to Emitter Voltage
3000
1000
Cies
300
100
30
10
3 ^{VGE = 0}
f = 1 MHz
1
0
10 20
Coes
Cres
30 40 50
Collector to Emitter Voltage V_CE (V)
Switching Characteristics
10
tf
3
1
td(off)
0.3
tr
0.1
0.03
0.01
0.1 0.2
td(on)
V_CC = 300 V, V_GE = 10 V
Rg = 200 Ω, Ta = 25°C
0.5 1 2
5 10
Collector Current I_C (A)
1000
Secondary Breakdown Energy
vs. Case Temperature
500
200
100
50
20 ^VCC ^{= 16 V, L = 5 mH}
V_GE = 10 V, Rg = 200 Ω
10
25
50
75
100 125
Case Temperature Tc (°C)
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
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