GN4014ZB4LD_09 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon IGBT Ignition Coil Driver

GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Electrical Characteristics
Item
Symbol Min
Collector to Emitter breakdown
voltage
V_(BR)CES
370
Gate to Emitter breakdown voltage V_(BR)GES ±20
Collector cutoff current
I_CES
—
Gate cutoff current
I_GES
—
Collector to emitter saturation voltage V_CE(sat)1
—
Collector to emitter saturation voltage V_CE(sat)2
—
Gate to emitter cutoff voltage
V_GE(off)
1.3
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_{d (off)}
—
Fall time
t_f
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reveres transfer capacitance
Cres
—
Secondary breakdown energy
Es/b
230
Typ Max
400
430
—
—
—
1.4
1.6
—
0.2
0.4
1.0
5
1110
75
18
—
—
100
±100
1.7
2.2
2.2
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test Conditions
V I_c = 2 mA, V_GE = 0 V
V I_G = ±100 µA, V_CE = 0 V
µA V_CE = 300 V, V_GE = 0 V
µA V_GE = ±20 V, V_CE = 0 V
V I_C = 8 A, V_GE = 10 V
V I_C = 8 A, V_GE = 4 V
V I_C = 1 mA, V_CE = 10 V
µs V_CE = 300 V, R_L = 50 Ω,
µs ^VGE ^{= 5 V, R}G ^{= 200 Ω}
µs
µs
pF V_CE = 10 V, V_GE = 0,
pF ^{f = 1 MHz}
pF
mJ L = 5 mH
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
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