FY6ACJ-03A Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
0.6
ID = 24A
0.4
12A
0.2
6A
3A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
VDS = 10V
Pulse Test
40
30
20
10
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
3
2
Ciss
10³
7
5
Coss
3
2
Crss
10²
7
5
3 TCh = 25°C
2 f = 1MHZ
10^{1 VGS = 0V}
10^–1 2 3 5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10²
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
TC = 25°C
Pulse Test
32
VGS = 4V
24
10V
16
8
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
VDS = 10V
7 _{Pulse Test}
5
4
TC = 25°C
3
75°C
2
125°C
10¹
7
5
4
3
2
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10²
td(off)
7
5
tf
4
3
tr
2
td(on)
10¹
7
5
4
3
2
10⁰₁₀₀
TCh = 25°C
VDD = 15V
VGS = 10V
RGEN = RGS = 50Ω
2 3 4 5 7 10¹ 2 3 4 5 7 10²
DRAIN CURRENT ID (A)
Sep. 2001