FY6ACJ-03A Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 10V
ID = 3A, VGS = 4V
ID = 6A, VGS = 10V
ID = 6A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.7A, VGS = 0V
Channel to ambient
IS = 1.7A, dis/dt = –50A/µs
Limits
Min.
Typ. Max.
30
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
17
23
—
26
40
—
102
138
—
12
—
—
1000
—
—
350
—
—
160
—
—
15
—
—
25
—
—
75
—
—
55
—
—
0.75 1.10
—
—
69.4
—
35
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
2
10²
7
5
3
tw = 100µs
2
10¹
7
5
1ms
3
2
10⁰
10ms
7
5
100ms
3
2
10^–1
7
5
TC = 25°C
DC
3 ^{Single Pulse}
2
23
5710⁰ 2 3
5710¹ 2 3
5710² 2 3
5710³ 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 10V
8V
6V
40
5V
TC = 25°C
Pulse Test
4V
30
OUTPUT CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
Pulse Test
16
VGS = 10V
8V
6V
5V
3V
12
4V
20
3V
10
PD = 1.8W
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
8
4
PD = 1.8W
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001