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FX70SMJ-03 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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FX70SMJ-03
Transfer Characteristics (Typical)
â100
â80
Tc = 25°C
VDS = â10V
Pulse Test
â60
â40
â20
0
0
â2 â4 â6 â8 â10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
105
7
Tch = 25°C
f = 1MHz
5 VGS = 0V
3
2
104
7
5
3
2
103
7
5
3
2
â3
â5 â7 â100
Ciss
Coss
Crss
â2 â3 â5 â7 â101 â2 â3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
â10
Tch = 25°C
ID = â70A
â8
VDS = â10V
â6
â20V
â25V
â4
â2
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7 VDS = â10V
5 Pulse Test
4
3
2
101
7
5
4
3
2
TC = 125°C
75°C
25°C
10â0100 â2 â3 â5 â7â101 â2 â3 â5 â7â102
Drain Current ID (A)
Switching Characteristics (Typical)
103
td(off)
7
5
tf
4
3
2
tr
102
td(on)
7
5
4
3
Tch = 25°C
2
VGS = â10V
VDD = â15V
RGEN = RGS = 50â¦
101
â5
â7
â100
â2
â3
â5â7 â101 â2 â3
â5â7 â102 â2 â3
â5
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
â100
â80
VGS = 0V
Pulse Test
â60
â40
TC = 25°C
75°C
125°C
â20
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
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