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FX70SMJ-03 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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FX70SMJ-03
Performance Curves
Power Dissipation Derating Curve
250
200
150
100
50
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
â100
VGS = â10V
â8V
â6V
â80
PD = 150W
â5V
â60
â40
â4V
â20
0
0
Tc = 25°C
Pulse Test
â3V
â0.4 â0.8 â1.2 â1.6 â2.0
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
â2.0
Tc = 25°C
Pulse Test
â1.6
â1.2
ID = â100A
â0.8
â0.4
â70A
â35A
0
0
â2 â4 â6 â8 â10
Gate-Source Voltage VGS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
â3
â2
â102
â7
â5
â3
â2
tw = 100µs
1ms
â10 1
â7
â5
DC
â3
â2
Tc = 25°C
Single Pulse
â10 0
â7
â5
â2 â3 â5â7â100 â2 â3 â5â7â101 â2 â3 â5â7â102 â2
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
â50
VGS = â10V
â40
â8V
â6V â5V
â4V
â30
â20
â10
0
0
â3V
Tc = 25°C
Pulse Test
â0.2 â0.4 â0.6 â0.8 â1.0
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
40
Tc = 25°C
Pulse Test
32
24
VGS = â4V
16
â10V
8
0
â100 â2 â3 â5 â7â101 â2 â3 â5â7â102 â2 â3 â5 â7â103
Drain Current ID (A)
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