FX6ASJ-3 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6ASJ-3
Transfer Characteristics (Typical)
–20
Tc = 25°C
VDS = –10V
–16 ^{Pulse Test}
–12
–8
–4
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
3
2
Tch = 25°C
Ciss
f = 1MHz
10³ _{VGS = 0V}
7
5
3
2
10²
7
5
3
–10⁰
–2 –3
–5 –7 –10¹
–2 –3
Coss
Crss
–5 –7–10²
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –6A
–8
VDS = –50V
–6
–80V
–100V
–4
–2
0
0
10 20 30 40 50
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
2
VDS = –10V _{Tc = 25°C}
10^{1 Pulse Test}
75°C
7
125°C
5
3
2
10⁰
7
5
3
2–7_{–10–1}
–2 –3
–5 –7 –10⁰
–2 –3
–5 –7
Drain Current I_D (A)
Switching Characteristics (Typical)
10³
7
Tch = 25°C
VDD = –80V
5 V_GS = –10V
RGEN = RGS = 50Ω
3
2
td(off)
10²
7
tf
5
3
2
10¹_{–7–10–1 –2 –3}
–5 –7 –10⁰
tr
td(on)
–2 –3 –5 –7
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–20
VGS = 0V
Pulse Test
–16
TC = 125°C
–12
75°C
25°C
–8
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6