FX6ASJ-3 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6ASJ-3
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–20
VGS = –10V
–6V
–16
–5V
–4V
–12
Tc = 25°C
Pulse Test
–8
–3V
–4
PD = 35W
0
0
–4 –8 –12 –16 –20
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–20
Tc = 25°C
Pulse Test
–16
–12
–8
ID = –12A
–4
–6A
–3A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–10²
–7
–5
–3
–2
–10¹
–7
–5
–3
–2
1ms100^µs
DC
–10⁰
–7
–5
–3 _{Tc = 25°C}
–2 _{Single Pulse}
–10^–1
–2
–3
–5 –7–10¹
–2
–3
–5 –7–10²
–2 –3
–5 –7–10³
–2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–10
VGS =
–10V
–6V
–8
–3.5V
–5V
–4V Tc = 25°C
Pulse Test
–6
–3V
–4
PD = 35W
–2
–2.5V
0
0
–2 –4 –6 –8 –10
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
1.0
Tc = 25°C
Pulse Test
0.8
0.6
VGS = –4V
–10V
0.4
0.2
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
Drain Current I_D (A)