FX50SMJ-06 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX50SMJ-06
Transfer Characteristics (Typical)
–100
–80
–60
–40
–20
0
0
Tc = 25°C
VDS = –10V
Pulse Test
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10⁵
7
5
Tch = 25°C
f = 1MHz
V_GS = 0V
3
2
Ciss
10⁴
7
5
3
2
Coss
10³
7
5
3
Crss
2
–3
–5–7–10⁰ –2 –3
–5–7–10¹ –2 –3
–5–7–10² –2 –3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –50A
–8
VDS =
–6
–10V
–20V
–40V
–4
–2
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7
TC =
125°C
75°C
5
4
25°C
3
2
10¹
7
5
4
VDS = –10V
3
Pulse Test
2
10–⁰_{100 –2 –3 –4 –5 –7–101 –2 –3 –4–5 –7–102}
Drain Current I_D (A)
Switching Characteristics (Typical)
10³
7
5
4
3
2
10²
7
5
4
3
2
10¹
–7
–10⁰
td(off)
tf
tr
td(on)
Tch = 25°C
V_GS = –10V
V_DD = –30V
R_GEN = R_GS = 50Ω
–2 –3 –4 –5 –7 –10¹ –2 –3 –4 –5 –7
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–100
–80
VGS = 0V
Pulse Test
TC =
125°C
75°C
–60
25°C
–40
–20
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6