FX50SMJ-06 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX50SMJ-06
Performance Curves
Power Dissipation Derating Curve
250
200
150
100
50
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–100
VGS =
–6V
–10V
–8V
–5V
–80
–60
–4V
–40
Tc = 25°C
Pulse Test
PD =
150W
–20
–3V
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–5.0
Tc = 25°C
Pulse Test
–4.0
–3.0
–2.0
ID =
–100A
–1.0
–50A
–25A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–3
–2
–10²
–7
–5
–3
–2
–10¹
–7
–5
–3
–2
Tc = 25°C
Single Pulse
tw =
10µs
100µs
1ms
DC
–10⁰
–7
–5
–3
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–50
VGS =
–10V
–4V
–40
–8V
–6V
–30 –5V
–20
–10
0
0
–3V
Tc = 25°C
Pulse Test
–0.4 –0.8 –1.2 –1.6 –2.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
40
Tc = 25°C
Pulse Test
32
VGS = –4V
24
16
–10V
8
0–10_{0 –2 –3 –5 –7–101 –2 –3 –5 –7–102}
Drain Current I_D (A)