FX30KMJ-2 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX30KMJ-2
Transfer Characteristics (Typical)
–50
–40
–30
Tc = 25°C
VDS = –10V
Pulse Test
–20
–10
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
10⁴
7
5
3
Ciss
2
Tch = 25°C
10³
f = 1MHz
7
5
V_GS = 0V
3
Coss
2
10²
7
Crss
5
3
2
–3
–5 –7–10⁰
–2 –3
–5 –7–10¹
–2 –3
–5 –7–10²
–2 –3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
–8
VDS =
–20V
–6
–40V
–80V
–4
–2
Tch = 25°C
ID = –30A
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7
5
4
TC =
3
25°C 75°C 125°C
2
10¹
7
5
4
VDS = –10V
3
Pulse Test
2
10⁰_{–7–100 –2 –3 –4–5 –7–101 –2 –3 –4–5 –7}
Drain Current I_D (A)
Switching Characteristics (Typical)
10³
7
Tch = 25°C
VGS = –10V
5
VDD = –50V
RGEN = RGS = 50Ω
3
td(off)
2
tf
10²
7
5
tr
3
2
td(on)
10¹_{–7–100 –2 –3 –4–5 –7–101 –2 –3 –4–5 –7}
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–50
VGS = 0V
Pulse Test
–40
–30
TC =
25°C
–20
75°C
125°C
–10
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6