FX30KMJ-2 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX30KMJ-2
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–50
VGS =
Tc = 25°C
–10V
–8V
Pulse Test
–40
–6V
–5V
–4V
–30
–20
–3V
–10
PD = 30W
0
0
–4 –8 –12 –16 –20
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–20
Tc = 25°C
Pulse Test
–16
–12
–8
ID = –50A
–4
–30A
–15A
0
0
–2 –4
–6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–2
–10²
–7
–5
–3
–2
100_µs
1ms
–10¹
DC
–7
–5
–3
–2
–10⁰ Tc = 25°C
–7 ^{Single Pulse}
–5
–3
–2
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–20
VGS =
–10V
–6V
Tc = 25°C
Pulse Test
–16
–4V
–3V
–12
–8
–2.5V
–4
PD = 30W
0
0
–2 –4
–6 –8 –10
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
200
160
VGS = –4V
120
–10V
80
Tc = 25°C
Pulse Test
40
0
–10^–1 –2 –3 –5 –7–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5 –7–10²
Drain Current I_D (A)