FX20VSJ-3 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX20VSJ-3
Transfer Characteristics (Typical)
– 50
Tc = 25°C
VDS = –10V
– 40 ^{Pulse Test}
– 30
– 20
–10
0
0
– 2 – 4 – 6 – 8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
10⁴
7
5
3
2
10³
7
5
3
2
10²
7
5
Tch = 25°C
3
2
f = 1MHz
VGS = 0V
10¹_{–100 –2 –3 –5 –7 –101}
–2 –3
Ciss
Coss
Crss
–5 –7 –10²
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = – 20A
–8
–6
VDS = – 50V
– 80V
–100V
–4
–2
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7
5
Tc = 25°C
3
75°C
2
125°C
VDS = –10V
Pulse Test
10¹
7
5
3
2
10⁰_{–100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102}
Drain Current I_D (A)
Switching Characteristics (Typical)
10³
7 ^{Tch = 25°C, VDD = – 80V}
5 ^{VGS = –10V, RGEN = RGS = 50Ω}
3
td(off)
2
tf
10²
7
tr
5
3
2
td(on)
10–¹_{100 –2 –3 –5 –7 –101 –2 –3 –5 –7}
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–20
Tc = 25°C
Pulse Test
–16
–12
Tc = 125°C
75°C
25°C
–8
–4
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.1.00, Aug.20.2004, page 4 of 6