FX20VSJ-3 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX20VSJ-3
Performance Curves
Drain Power Dissipation Derating Curve
100
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–20
VGS =
–10V
–16
Tc = 25°C
– 8V _{Pulse Test}
– 6V
– 4V
–12
– 3V
–8
PD = 70W
– 2.5V
–4
0
0 – 2 – 4 – 6 – 8 –10
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–10
ID = – 30A
–8
–6
– 20A
–4
–10A
–2
Tc = 25°C
Pulse Test
0
0 – 2 – 4 – 6 – 8 –10
Gate-Source Voltage V_GS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
Maximum Safe Operating Area
–2
–10²
–7
–5
–3
–2
tw = 10µs
–10¹
–7
–5
–3
–2
100µs
1ms
–10⁰
–7
10ms
–5 _{Tc = 25°C}
DC
–3 Single Pulse
–2
–2 –3 –5–7–10¹ –2 –3 –5–7–10² –2 –3 –5–7–10³ –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–10 _{VGS= –10V}
– 8V
–8
–6
Tc = 25°C
Pulse Test
– 6V
– 4V
– 3V
– 2.5V
–4
–2
0
0 –1.0 –2.0 –3.0 – 4.0 –5.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
0.5
Tc = 25°C
Pulse Test
0.4
0.3
VGS= – 4V
–10V
0.2
0.1
0–10_{0 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102}
Drain Current I_D (A)