FX20KMJ-2 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX20KMJ-2
Transfer Characteristics (Typical)
–50
Tc = 25°C
VDS = –10V
–40
Pulse Test
–30
–20
–10
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
3
2
Ciss
10³
Tch = 25°C
7
f = 1MHz
5
V_GS = 0V
4
3
2
Coss
10²
7
5
4
Crss
3
–3
–5–7–10⁰
–2 –3
–5–7–10¹ –2 –3
–5–7–10² –2 –3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –20A
–8
–6
–4
VDS =
–20V
–50V
–80V
–2
0
0
10 20 30 40 50
Gate Charge Qg (nC)
Rev.2.00 Aug 07, 2006 page 4 of 6
Forward Transfer Admittance vs.
Drain Current (Typical)
2
10¹
7
5
4
3
TC = 25°C 75°C 125°C
2
10⁰
7
5 ^{VDS = –10V}
4 Pulse Test
3
2
–7
–10⁰
–2 –3 –4–5 –7 –10¹
–2 –3 –4–5 –7
Drain Current I_D (A)
Switching Characteristics (Typical)
3
2
td(off)
10²
tf
7
5
4
tr
3
2
td(on)
10¹
7
5
4
3
–5
–7 –10⁰
Tch = 25°C
VDD = –50V
VGS = –10V
RGEN = RGS = 50Ω
–2 –3 –4 –5 –7 –10¹ –2 –3 –4 –5
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–50
VGS = 0V
Pulse Test
–40
–30
TC =
25°C
–20
75°C
125°C
–10
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)