FX20KMJ-2 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX20KMJ-2
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–50
VGS =
Tc = 25°C
–10V –8V
Pulse Test
–40
–6V
–5V
–30
–20
–4V
–10
–3V
PD = 25W
0
0
–10 –20 –30 –40 –50
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–50
Tc = 25°C
Pulse Test
–40
–30
–20
–10
0
0
ID =
–40A
–10A
–20A
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–2
–10²
–7
–5
–3
–2
–10¹
–7
–5
–3
–2
1ms100^µs
DC
–10⁰
–7
–5
Tc = 25°C
Single Pulse
–3
–2
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–20
VGS =
–4V
–10V
–16
–6V
–12
–5V
Tc = 25°C
Pulse Test
–8
–3V
–4
PD = 25W
0
0
–4 –8 –12 –16 –20
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
0.5
VGS =
0.4
–4V
0.3
–10V
0.2
0.1
Tc = 25°C
Pulse Test
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
Drain Current I_D (A)