BB305M Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305M
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
V_DS = V_G1 = 5 V
20
15
10
5
47 ^{k Ω}
56 ^{k Ω}
68 ^{k Ω}
82 ^{k Ω}
100 ^{k Ω}
120 ^{k Ω}
150 ^{k Ω}
180 ^{k Ω}
R_G ^{= 220 kΩ}
0
0.8 1.6 2.4 3.2 4.0
Gate2 to Source Voltage V_G2S (V)
Drain Current vs. Gate1 Voltege
20
V_DS = 5 V
16 ^RG ^{= 82 kΩ}
12
4V
8
3V
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Rev.6.00 Aug 10, 2005 page 4 of 9
Typical Output Characteristics
25
V_G2S = 4 V
V_G1 = V_DS
20
15
10
5
1111858206002800kkkkkk^{ΩΩΩΩΩΩ}
RG ^{= 220 kΩ}
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 68 kΩ
16
12
4V
3V
8
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Voltege
20
V_DS = 5 V
16 RG = 100 kΩ
12
4V
8
3V
2V
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)