BB305M Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305M
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain current
Forward transfer admittance
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V_(BR)DSS
V_(BR)G1SS
V_(BR)G2SS
I_G1SS
I_G2SS
V_G1S(off)
12
+10
±10
—
—
0.4
—
—
—
—
—
—
— +100
— ±100
—
1.0
V_G2S(off)
0.4
—
1.0
Ciss
Coss
Crss
2.3
2.8
3.5
1.1
1.5
1.9
— 0.017 0.04
V
I_D = 200 µA, V_G1S = V_G2S = 0
V
I_G1 = +10 µA, V_G2S = V_DS = 0
V
I_G2 = ±10 µA, V_G1S = V_DS = 0
nA V_G1S = +9 V, V_G2S = V_DS = 0
nA V_G2S = ±9 V, V_G1S = V_DS = 0
V
V_DS = 5 V, V_G2S = 4 V
I_D = 100 µA
V
V_DS = 5 V, V_G1S = 5 V
I_D = 100 µA
pF V_DS = 5 V, V_G1 = 5 V
pF VG2S =4 V, RG = 82 kΩ
pF f = 1 MHz
I_D(op) 1
10
15
20
mA V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 82 kΩ
I_D(op) 2
—
13
—
mA V_DS = 9 V, V_G1 = 9 V, V_G2S = 6 V
R_G = 220 kΩ
|y_fs|1
23
28
—
mS V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G =82 kΩ, f = 1 kHz
|y_fs|2
—
28
—
mS V_DS = 9 V, V_G1 = 9 V, V_G2S = 6 V
R_G = 220 kΩ, f = 1 kHz
PG1
24
28
—
dB V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 82 kΩ, f = 200 MHz
PG2
—
28
—
dB V_DS = 9 V, V_G1 = 9 V, V_G2S = 6 V
R_G = 220 kΩ, f = 200 MHz
NF1
—
1.4
1.9
dB V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 82 kΩ, f = 200 MHz
NF2
—
1.4
—
dB V_DS = 9 V, V_G1 = 9 V, V_G2S = 6 V
R_G = 220 kΩ, f = 200 MHz
Rev.6.00 Aug 10, 2005 page 2 of 9