3SK318 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK318
Noise Figure vs. Drain Current
5
V_DS = 3.5 V
V_G2S = 3 V
4
f = 900 MHz
3
2
1
0
5
10 15 20 25
Drain Current I_D (mA)
Noise Figure vs. Drain to Source Voltage
5
V_G2S = 3 V
4
I_D = 10 mA
f = 900 MHz
3
2
1
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Noise Figure vs. Gate2 to Source Voltage
5
V_DS = 3.5 V
4
f = 900MHz
3
2
1
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
Power Gain vs. Drain to Source Voltage
25
20
15
10
5
V_G2S = 3 V
I_D = 10 mA
f = 900 MHz
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Power Gain vs. Gate2 to Source Voltage
25
V_DS = 3.5 V
20 ^{f = 900MHz}
15
10
5
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
Rev.2.00 Aug 10, 2005 page 4 of 7