3SK318 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK318
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
6
±6
±6
20
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V_(BR)DSS
6
—
—
V
I_D = 200 µA, V_G1S = V_G2S = 0
V_(BR)G1SS
±6
—
—
V
I_G1 = ±10 µA, V_G2S = V_DS = 0
V_(BR)G2SS
±6
—
—
V
I_G2 = ±10 µA, V_G1S = V_DS = 0
I_G1SS
I_G2SS
V_G1S(off)
V_G2S(off)
I_DS(op)
|y_fs|
C_iss
C_oss
C_rss
PG
NF
—
—
±100
nA V_G1S = ±5 V, V_G2S = V_DS = 0
—
—
±100
nA V_G2S = ±5 V, V_G1S = V_DS = 0
0.5
0.7
1.0
V
V_DS = 5 V, V_G2S = 3 V
I_D = 100µA
0.5
0.7
1.0
V
V_DS = 5 V, V_G1S = 3 V
I_D = 100 µA
0.5
4
10
mA V_DS = 3.5 V, V_G1S = 1.1 V
V_G2S = 3 V
18
24
32
mS V_DS = 3.5 V, V_G2S = 3 V
I_D = 10 mA , f = 1 kHz
1.3
1.6
1.9
pF V_DS = 3.5 V, V_G2S = 3 V
0.9
1.2
1.5
pF ID = 10 mA , f= 1 MHz
— 0.019 0.03 pF
18
21
—
dB V_DS = 3.5 V, V_G2S = 3 V
—
1.4
2.2
dB ID = 10 mA , f = 900 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7