2SK1838 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1838(L), 2SK1838(S)
Static Drain to Source on State
Resistance vs. Temperature
25
20
Pulse Test
VGS = 10 V
15
ID = 0.5 A
10
0.1 A
5
0.2 A
0
– 40 0
40 80 120 160
Case Temperature T_C (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25 C
20
10
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
ID = 0.5 A
400
16
V GS
300
200 ^VDS
12
VDD = 200 V
100 V
8
50 V
100
0
VDD = 200 V
4
100 V
50 V
0
4
8
12
16 20
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
Pulse Test
V_DS = 10 V
2
1
Tc = – 25 C
0.5
25 C
75 C
0.2
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
100
Ciss
Coss
10
Crss
1
0
10
20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
V_GS = 10 V, V_DD = 30 V
50
PW = 2 µs, duty ≤ 1 %
tf
20
td _(off)
10
5 ^{td (on)}
tr
2
1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Rev.3.00 Nov 21, 2005 page 4 of 7