2SK1838 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1838(L), 2SK1838(S)
Main Characteristics
Power vs. Temperature Derating
20
15
10
5
0
50
100
150
200
Case Temperature T_C (°C)
Typical Output Characteristics
1.0
8V
6V
10 V
0.8
5V
Pulse Test
0.6
4.5 V
0.4
4V
0.2
VGS = 3.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
0.5 A
2
0.2 A
1
ID = 0.1 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.3.00 Nov 21, 2005 page 3 of 7
Maximum Safe Operation Area
10
3
1
0.3
0.1
DC
OpePraWtio=n1(0Tcm=1s
100
ms ^s
2(15_°^sCh)ot)
0.03
Operation in this area
is limited by R_DS (on)
Ta = 25°C
0.01
13
10 30 100 300
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
1.0
0.8
Pulse Test
VDS = 10 V
0.6
0.4
0.2
Tc = 75°C
0
2
25°C
– 25°C
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20 VGS = 10 V
10
5
2
1
0.5
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)