2SK1623 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1623(L), 2SK1623(S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
I_D = 20 A ^{10 A} _{5 A}
0.12
V_GS = 4 V
0.08
20 A
0.04
10 V
5 A, 10 A
0
–40
0
40
80 120 160
Case Temperature Tc (°C)
1000
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
0.5 1 2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
Pulse Test
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 20 A
80
V_DD = 25 V
16
50 V
V_DS
80 V
60
V_GS
12
40
8
20
V_DD = 80 V
4
50 V
25 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
0.5
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
500
Switching Characteristics
td(off)
200
100
50
20
10
0.5
tf
tr
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
td(on)
12
5 10 20 50
Drain Current I_D (A)
Rev.3.00 Jan 10, 2006 page 4 of 7