2SK1623 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1623(L), 2SK1623(S)
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
7V
5V
40
Pulse Test
4V
30
3.5 V
20
3V
10
V_GS = 2.5 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
I_D = 20 A
1.2
0.8
10 A
0.4
5A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.3.00 Jan 10, 2006 page 3 of 7
Maximum Safe Operation Area
100
30
10
DC
3
1
Operation
Operation in
(Tc
=
25°C)
this area is
0.3 ^{limited by R}DS (on)
Ta = 25°C
0.1
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
V_GS = 4 V
0.05
10 V
0.02
0.01
0.005
2
5 10 20 50 100 200
Drain Current I_D (A)