2SK1620 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1620(L), 2SK1620(S)
Static Drain to Source on State
Resistance vs. Temperature
0.5
V_GS = 10 V
Pulse Test
0.4
0.3
5A
10 A
0.2
2A
0.1
0
–40 0
40
80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
di/dt = 50 A/µs
20
V_GS = 0
Ta = 25°C
10
Pulse Test
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
200
20
160
120
V_DS
80
V_DD = 100 V
16
50 V
25 V
12
V_GS
8
40
V_DD = 100 V ^{ID = 10 A} ₄
50 V
25 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_GS = 10 V
20 Pulse Test
–25°C
10
Ta = 25°C
5
75°C
2
1.0
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current I_D (A)
10,000
1,000
Typical Capacitance
vs. Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
100
Crss
10
0
10 20 30 40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS
=
10
V,
V_DD
=•
•
30
V
PW = 2 µs, duty< 1 %
200
tr
100
td(off)
50
tf
20
td(on)
10
5
0.2 0.5 1.0 2
5 10 20
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 7